t1m5f-a series maximum ratings ( t j = 2 5 u n l e s s o t h e r w i s e n o t i c e d ) j features one-piece, injection-molded package blocking voltage to 600 volts sensitive gate triggering in four trigger modes (quadrants) for all possible combinations of trigger sources, and especially for circuits that source gate drives all diffused and glassivated junctions for maximum uniformity of parameters and reliability improved noise immunity (dv/dt minimum of 20 v/msec a t 1 1 0 ) j c o m m u t a t i n g d i / d t o f 1 . 6 a m p s / m s e c a t 1 1 0 j high surge current of 12 amps pb-free package sensitive gate triacs sillicon bidirectional thyristors triacs 1.0 amperes rms 400 thru 600 volts rating symbol value unit peak repetitive off?state voltage ( t j = -40 to 110 j , sine wave, 50 to 60 hz; gate open) v drm , v rrm 400 600 volts on-state rms current full cycle sine wave 50 to 60 hz ( t c = 50 j ) i t(rms) 1.0 amp peak non-repetitive surge current full cycle sine wave 60 hz (tj =25 j ) i tsm 12.0 amps circuit fusing consideration (t = 8.3 ms) i t 0.60 a s p e a k g a t e p o w e r ( t 2 . 0 u s , t c = 8 0 ?? j ) p gm 5.0 watt average gate power ( tc = 8 0 , t 8 . 3 m s ) j ?? p g(av) 0.1 watt p e a k g a t e c u r r e n t ( t 2 . 0 u s , t c = 8 0 ?? j ) i gm 1.0 amp p e a k g a t e v o l t a g e ( t 2 . 0 u s , t c = 8 0 ?? j ) v gm 5.0 volts operating junction temperature range t j -40 to +110 j storage temperature range tstg -40 to +150 j 2 2 rev. 2, jun-2005, ktxd11 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. to-92 (to-226aa) seating plane to-92 (to-226aa) all dimensions in millimeter to-92 dim. min. max. a c d e f g h b 4.45 4.70 5.33 4.32 3.18 4.19 1.39 1.15 2.42 2.66 12.7 ------ 2.04 2.66 3.43 ----- i ----- 2.93 1 main terminal 1 2 gate 3 main terminal 2 pin assignment semiconductor lite-on t1m5f400a T1M5F600A
rating and characteristic curves t1m5f-a series characteristic symbol value unit thermal resistance - junction to lead - junction to case - junction to ambient rthjl rthjc rthja 60 75 150 / j w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 j characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 j (vd=rated vdrm and vrrm; gate open) t j = 1 1 0 j i drm i rrm ---- ---- ---- ---- 10 100 ua ua peak forward on-state voltage (i tm= 1 a p e a k @ t p 2 . 0 m s , d u t y c y c l e 2 % ) ?? ?? v tm ---- ---- 1.9 volts gate trigger current (continuous dc) (v d = 12 vdc; r l = 100 ohms) i gt1 i gt2 i gt3 i gt4 ---- ---- ---- ---- ---- ---- ---- ---- 5.0 5.0 5.0 7.0 ma holding current (v d = 12 v, initiating current = 200 ma, gate open) i h ---- 1.5 10 ma turn-on time (v d = rated vdrm , i tm = 1.0 a pk, i g = 25 ma) tgt ---- 2 ---- us gate trigger voltage (continuous dc) (v d = 12 vdc; r l =100 ohms) v gt1 v gt2 v gt3 v gt4 ---- ---- ---- ---- 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 volts latching current (v d =12v,i g = 10 ma) i l1 i l2 i l3 i l4 ---- ---- ---- ---- 1.6 10.5 1.5 2.5 15 20 15 15 ma gate non-trigger voltage (v d = 12v, r l = 100 ohms , t j =110 j ) v gd 0.1 ---- ---- volts critical rate of rise of off-state voltage (v d =rated v drm ,exponential waveform, gate open, t j =110 ) j dv/dt 20 60 ---- v/us repetitive critical rate of rise of on-state current pulse width = 20 us, ipkmax = 15 a, dig/dt = 1 a/us, f = 60 hz di/dt ---- ---- 10 a/us rate of change of commutating current (v d = 400 v, i tm = .84 a, commutating dv/dt = 1.5 v/us, gate open, t j = 110c, f = 250 hz, with snubber) di/dt(c) 1.6 ---- ---- a/ms thermal characteristics electrical characteristics (t c = 2 5 u n l e s s o t h e r w i s e n o t e d ) j off characteristics on characteristics dynamic characteristics
rating and characteristic curves t1m5f-a series 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30 40 50 60 70 80 90 100 110 tc,case temperature( ) it(rms),rms on-state current(amps) figure 2. rms current derating figure 1. rms current derating 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ta,ambient temperature( ) it(rms),rms on-state current(amps) j 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 20 30 40 50 60 70 80 90 100 110 ta,ambient temperature( ) it(rms),rms on-state current(amps) j j figure 3. power dissipation a= 30 90 120 180 dc 60 a= 30 90 120 180 dc 60 a= 30 90 120 180 dc 60
rating and characteristic curves t1m5f-a series s p e c i f i c a t i o n s m e n t i o n e d i n t h i s p u b l i c a t i o n a r e s u b j e c t t o c h a n g e w i t h o u t n o t i c e . ? figure 6. maximum allowable surge current 1 10 100 number of cycles 0 4 8 12 16 t j = 2 5 j f= 60mhz i tsm , peak surge current (amps)
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